Document
SPP3407W
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP3407W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. FEATURES -30V/-4.0A,RDS(ON)= 70mΩ@VGS=- 10V -30V/-3.2A,RDS(ON)= 95mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter
PIN CONFIGURATION(SOT-23)
PART MARKING
S07WYW
S07W : Device Specific code
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SPP3407W
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3 ORDERING INFORMATION Part Number SPP3407WS23RG ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP3407WS23RG : Tape Reel ; Pb – Free Package SOT-23 Part Marking S07WYW Symbol G S D Description Gate Source Drain
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical -30 ±20 -3.6 -3.0 -15 -1.0 1.25 0.8 150 -55/150 375 Unit V V A A A W ℃ ℃ ℃/W
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P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted)
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V(BR)DSS VGS=0V,ID=-250uA VGS(th) VDS=VGS,ID=-250uA IGSS IDSS ID(on) RDS(on) gfs VSD VDS=0V,VGS=±20V VDS=-24V,VGS=0V VDS=-24V,VGS=0V TJ=55℃ VDS≦-5V,VGS=-10V VGS=- 10V,ID=-4.0A VGS=-4.5V,ID=-3.2A VDS=-5.0V,ID=-4.0A IS=-1.0A,VGS=0V
-30 -0.8 -2.5 ±100 -1 -10 -10 0.070 0.095 10 -0.8 -1.2
V nA uA A Ω S V
Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf
VDS=-15V,VGS=-10V ID= -3.5A
10 1.6 3.0 450 95 55 8
18 nC
VDS=-15V,VGS=0V f=1MHz
pF 18 18 50 35 nS
VDD=-15V,RL=15Ω ID≡-1.0A,VGEN=-10V RG=6Ω
8 25 25
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SPP3407W
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPP3407W
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPP3407W
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPP3407W
P-Channel Enhancement Mode MOSFET
SOT-23 PACKAGE OUTLINE
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SPP3407W
P-Channel Enhancement Mode MOSFET
Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com
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