KN3904S

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current : ICEX=50nA(Max.) ; @VCE=30V, VEB=3V. Low Saturation Voltage : VCE(sat)=0.3V(Max.) ; IC=50mA, IB=5mA. Complementary to the KN3906S. Suffix U : Qualified to AEC-Q101. ex) KN3904S-RTK/HU MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC * Tj 60 40 6 200 50 350 150 Storage Temperature Range Tstg -55 150 Note : * Package Mounted On 99.5% Alumina 10 8 0.6 ) UNIT V V V mA mA mW KN3904S EPITAXIAL PLANAR NPN TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 Q K 0.00 ~ 0.10 PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking ZCAType Name Lot No. 2018. 04. 10 Revision No : 3 1/3 KN3904S ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Transition Frequency * ICEX V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) hFE(2) hFE(3) hFE(4) hFE(5) VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Collecto...