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KN3904S Datasheet, Equivalent, NPN TRANSISTOR.

EPITAXIAL PLANAR NPN TRANSISTOR

EPITAXIAL PLANAR NPN TRANSISTOR

 

 

 

Part KN3904S
Description EPITAXIAL PLANAR NPN TRANSISTOR
Feature SEMICONDUCTOR TECHNICAL DATA GENERAL PUR POSE APPLICATION.
SWITCHING APPLICATION .
FEATURES Low Leakage Current : ICEX=5 0nA(Max.
) ; @VCE=30V, VEB=3V.
Low Satur ation Voltage : VCE(sat)=0.
3V(Max.
) ; I C=50mA, IB=5mA.
Complementary to the KN 3906S.
Suffix U : Qualified to AEC-Q101 .
ex) KN3904S-RTK/HU MAXIMUM RATING (T a=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitte r Voltage Emitter-Base Voltage Collecto r Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC * Tj 60 40 6 200 50 350 150 Storage Temperature Range Ts tg -55 150 No .
Manufacture KEC
Datasheet
Download KN3904S Datasheet
Part KN3904S
Description EPITAXIAL PLANAR NPN TRANSISTOR
Feature SEMICONDUCTOR TECHNICAL DATA GENERAL PUR POSE APPLICATION.
SWITCHING APPLICATION .
FEATURES Low Leakage Current : ICEX=5 0nA(Max.
) ; @VCE=30V, VEB=3V.
Low Satur ation Voltage : VCE(sat)=0.
3V(Max.
) ; I C=50mA, IB=5mA.
Complementary to the KN 3906S.
Suffix U : Qualified to AEC-Q101 .
ex) KN3904S-RTK/HU MAXIMUM RATING (T a=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitte r Voltage Emitter-Base Voltage Collecto r Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC * Tj 60 40 6 200 50 350 150 Storage Temperature Range Ts tg -55 150 No .
Manufacture KEC
Datasheet
Download KN3904S Datasheet

KN3904S

KN3904S
KN3904S

KN3904S

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