SPP4953W
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP4953W is the Dual P-Channel logic enhancement mode power ...
SPP4953W
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP4953W is the Dual P-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
FEATURES -30V/-5.4A,RDS(ON)=65mΩ@VGS=-10V -30V/-4.0A,RDS(ON)=95mΩ@VGS=-4.5V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC current
capability SOP–8 package design
PIN CONFIGURATION(SOP–8)
PART MARKING
2020/03/19 Ver.4
Page 1
SPP4953W
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8
Symbol S1 G1 S2 G2 D2 D2 D1 D1
Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1
ORDERING INFORMATION
Part Number
Package
SPP4953WS8RGB
SOP-8
※ SPP4953WS8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current
TA=25℃ TA=70℃
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operating Junction T...