SPC6605
N & P Pair Enhancement Mode MOSFET
DESCRIPTION The SPC6605 is the N- and P-Channel enhancement mode power field...
SPC6605
N & P Pair Enhancement Mode MOSFET
DESCRIPTION The SPC6605 is the N- and P-Channel enhancement mode power field effect
transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed.
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
FEATURES N-Channel
20V/3.6A,RDS(ON)=97mΩ@VGS=4.5V 20V/3.1A,RDS(ON)=113mΩ@VGS=2.5V P-Channel -20V/-2.4A,RDS(ON)= 128mΩ@VGS=-4.5V -20V/-2.0A,RDS(ON)=188mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) TSOT-23-6L package design
PIN CONFIGURATION(TSOT-23–6L)
PART MARKING
2020/04/09 Ver 2
Page 1
SPC6605
N & P Pair Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3 4 5 6
Symbol G1 S2 G2 D2 S1 D1
Description Gate 1 Source 2 Gate 2 Drain 2
Source 1 Drain1
ORDERING INFORMATION
Part Number
Package
SPC6605TS26RGB
TSOT-23-6L
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPC6605TS26RGB : Tape Reel ; Pb – Free ; Halogen -Free
Part Marking 05
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage...