SPN2326

SPN2326 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2326 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN2326 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  Powered System  DC/DC Converter  Load Switch FEATURES  100V/3A,RDS(ON)=310mΩ@VGS=10V  High density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-23-6L package design PIN CONFIGURATION(SOT-23-6L) 2020/02/21 Ver.4 PART MARKING Page 1 SPN2326 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 Symbol D D G S D D Description Drain Drain Gate Source Drain Drain ORDERING INFORMATION Part Number Package SPN2326S26RGB SOT-23-6L ※ SPN2326S26RGB : Tape Reel ; Pb – Free ; Halogen – Free Part Marking 26 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Drain-Source Voltage VDSS Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25℃ TA=70℃ VGSS ID IDM PD TJ TSTG RθJA Typical 100 ±20 3.0 2.0 10 2.0 1.3 -55/150 -55/150 62.5 Unit V V A A W ℃ ℃ ℃/W 2020/02/...