Silicon Power Transistors
2SB962,962-Z
PNP
mm
DC-DC
1.5 −0.1
+0.2
fT hFE VCE(sat) VCE(sat)
1.6 ±0.2
6.5 ±0.2 5.0 ±0....
Silicon Power
Transistors
2SB962,962-Z
PNP
mm
DC-DC
1.5 −0.1
+0.2
fT hFE VCE(sat) VCE(sat)
1.6 ±0.2
6.5 ±0.2 5.0 ±0.2
2.3 ±0.2 0.5 ±0.1
5.5 ±0.2 7.0 MIN.
⎛ 2 A ⎞ 0.5 V ⎝0.2 A ⎠
4
13.7 MIN.
+0.2
1
2
3
TA = 25°C
1.1 ±0.2
VCBO VCEO VEBO IC(DC)
1
40 30 5.0 3.0 6.0 0.6 1.0 10 150 -55~+150
V V V A A A W TO-251 MP-3
0.5 −0.1
2.3 2.3
0.75
0.5 −0.1
+0.2
IC(pulse) IB(DC)
2
PT(TA = 25°C) PT(TC = 25°C) Tj Tstg
5.0 ±0.2 4.4 ±0.2
5.6 ±0.3
1.5 −0.1
+0.2
ジャンクション
6.5 ±0.2
W °C °C
2.3 ±0.2 0.5 ±0.1
1.0 ±0.5 0.4 MIN. 0.5 TYP. 2.5 ±0.5
4
5.5 ±0.2
1. 2.
PW
10 ms, Duty Cycle 50
1 2 3
0.5 ±0.1 0.5 ±0.1 2.3 ±0.3 2.3 ±0.3
0.15 ±0.15
9.5 ±0.5
1. 2. 3. 4.
TO-252
MP-3Z
0 0.2 mm
D18265JJ4V0DS00 TC-5641B July 2006 NS CP(K)
4
1982, 2006
PDF
2SB962,962-Z
2
D18265JJ4V0DS
2SB962,962-Z
D18265JJ4V0DS
3
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