PNP Transistor
DATA SHEET
SILICON POWER TRANSISTOR
2SB962-Z
PNP SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SB962-Z is design...
Description
DATA SHEET
SILICON POWER
TRANSISTOR
2SB962-Z
PNP SILICON EPITAXIAL
TRANSISTOR
DESCRIPTION
The 2SB962-Z is designed for Audio Frequency Amplifier and
Switching, especially in Hybrid Integrated Circuits.
FEATURES
Low VCE(sat): VCE(sat) = −0.3 V TYP.
PACKAGE DRAWING (Unit: mm)
6.5 ±0.2 5.0 ±0.2 4.4 ±0.2
4
Note
1.5
+0.2 −0.1
2.3 ±0.2 0.5 ±0.1 Note
1.0 ±0.5 0.4 MIN. 0.5 TYP.
2.5 ±0.5
5.6 ±0.3 9.5 ±0.5
5.5 ±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base voltage
VCBO
−40
V
Collector to Emitter voltage
VCEO
−30
V
Emitter to Base voltage
VEBO
−5
V
Collector Current (DC)
IC(DC)
−3
A
Collector Current (pulse) Note 1
IC(pulse)
−6
A
Total Power Dissipation (TA = 25°C) Note 2 PT
2.0
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg −55 to +150 °C
123
2.3 ±0.3
0.5 ±0.1 2.3 ±0.3
0.5 ±0.1 0.15 ±0.15
TO-252 (MP-3Z)
1. Base 2. Collector 3. Emitter 4. Collector Fin
Note The depth of notch at the top of the fin is from 0 to 0.2 mm.
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2. When mounted on ceramic substrate of 7.5 cm2 × 0.7 mm
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Document No. D18265EJ4V0DS00 (4th edition)
(Previous No. TC-1626B)
Date Published July...
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