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SPN2054 Dataheets PDF



Part Number SPN2054
Manufacturers SYNC POWER
Logo SYNC POWER
Description N-Channel MOSFET
Datasheet SPN2054 DatasheetSPN2054 Datasheet (PDF)

SPN2054 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2054 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as DC/DC converter and Desktop computer power management. The package is universally preferred for commercial industrial surface mount applicatio.

  SPN2054   SPN2054



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SPN2054 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2054 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as DC/DC converter and Desktop computer power management. The package is universally preferred for commercial industrial surface mount applications APPLICATIONS • Power Management in Desktop Computer • DC/DC Converter • LCD Display inverter FEATURES  20V/12A,RDS(ON)=40mΩ@VGS=10V  20V/7A,RDS(ON)=45mΩ@VGS=4.5V  20V/4A,RDS(ON)=50mΩ@VGS=2.5V  20V/2A,RDS(ON)=60mΩ@VGS=1.8V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-252-2L package design PIN CONFIGURATION(TO-252-2L) PART MARKING 2020/04/28 Ver.4 Page 1 SPN2054 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN2054T252RGB TO-252-2L ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN2054T252RGB : Tape Reel ; Pb – Free ; Halogen - Free Part Marking SPN2054 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical 20 ±12 12 8 20 12 40 20 -55/150 -55/150 105 Unit V V A A A W ℃ ℃ ℃/W 2020/04/28 Ver.4 Page 2 SPN2054 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Symbol Conditions V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS VDS=0V,VGS=±12V IDSS RDS(on) gfs VDS=20V,VGS=0V VDS=20V,VGS=0V TJ=55℃ VGS=10V,ID=12A VGS=4.5V,ID=7A VGS=2.5V,ID=4A VGS=1.8V,ID=2A VDS=5V,ID=-3.6A VSD IS=7A,VGS=0V Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS=10V,VGS=4.5V ID=12A VDS=10V,VGS=0V f=1MHz VDD=10V,RL=6Ω ID=1.0A,VGEN=4.5V RG=6Ω Min. Typ Max. Unit 20 V 0.36 1.0 ±100 nA 1 uA 5 0.031 0.040 0.035 0.045 Ω 0.040 0.050 0.048 0.060 10 S 0.95 1.2 V 4.8 8 1.0 nC 1.0 485 85 pF 40 8 14 12 18 nS 30 35 12 16 2020/04/28 Ver.4 Page 3 SPN2054 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/04/28 Ver.4 Page 4 SPN2054 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/04/.


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