SPN9910

SPN9910 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN9910 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for most of synchronous buck converter applications. APPLICATIONS  DC/DC Converter  Load Switch  Synchronous Buck Converter FEATURES  60V/60A, RDS(ON)=10mΩ@VGS=10V  60V/60A, RDS(ON)=12.0mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-252-2L/TO-251S-3L package design PIN CONFIGURATION TO-252 TO-251 2020/04/20 Ver.3 PART MARKING Page 1 SPN9910 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN9910T252RGB TO-252-2L SPN9910ST251TGB TO-251S-3L ※ SPN9910T252RGB: Tape Reel ; Pb – Free; Halogen – Free ※ SPN9910ST251TGB: Tube ; Pb – Free; Halogen – Free Part Marking SPN9910 SPN9910 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=100℃ Symbol VDSS VGSS ID IDM Avalanche Current Power Dissipation TA=25℃ Avalanche Energy with Single Pulse ( Tj=25℃, L = 0.1mH , IAS = 38A , VDD = 25V. ) Operating Junction Temperature Storage Temperature ...