SPN30T10

SPN30T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN30T10 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. SPN30T10 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  High Frequency Small Power System  DC/DC Converter  Load Switch FEATURES  100V/20A,RDS(ON)=45mΩ@VGS=10V  100V/15A,RDS(ON)=50mΩ@VGS=4.5V  High density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-252-2L/PPAK5x6-8L package design PIN CONFIGURATION TO-252-2L PPAK5x6-8L PART MARKING 2020/04/30 Ver.4 Page 1 SPN30T10 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION (TO-252-2L) Pin 1 2 3 Symbol G D S Description Gate Drain Source PIN DESCRIPTION (PPAK5x6-8L) Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN30T10T252RGB TO-252-2L SPN30T10DN8RGB PPAK5x6-8L ※ SPN30T10T252RGB : Tape& Reel ; Pb – Free ; Halogen – Free ※ SPN30T10DN8RGB : Tape&Reel ; Pb – Free ; Halogen - Free Part Marking SPN30T10 SPN30T10 2020/04/30 Ver.4 Page 2 SPN30T10 N-Channel Enhancement Mode MOSFET ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter...