SPN8902

SPN8902 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8902 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN8910 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  High Frequency Small Power Switching for MB/NB/VGA  Network DC/DC Power System  Load Switch FEATURES  100V/2A, RDS(ON)=330mΩ@VGS=10V  100V/1A, RDS(ON)=350mΩ@VGS=4.5V  High density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-223 package design PIN CONFIGURATION SOT-223 PART MARKING 2020/04/13 Ver.2 Page 1 SPN8902 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN8902S22RGB SOT-223 ※ SPN8902S22RGB : Tape Reel ; Pb – Free ; Halogen – Free ※ Date code : YY (year 00~99) , WW(week 01~53) Part Marking 8902 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Power Dissipation TA=25℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Symbol VDSS VGSS ID IDM PD TJ TSTG R...