SPN1022
Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN1022 is the Dual N-Channel enhancement mode power fie...
SPN1022
Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN1022 is the Dual N-Channel enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
FEATURES N-Channel
20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD protected SOT-563 (SC-89-6L) package design
PIN CONFIGURATION (SOT-563 / SC-89-6L)
PART MARKING
2022/09/22 Ver.3
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SPN1022
Dual N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3 4 5 6
Symbol S1 G1 D2 S2 G2 D1
Description Source 1 Gate 1 Drain 2
Source 2 Gate 2 Drain1
ORDERING INFORMATION
Part Number
Package
SPN1022S56RGB
SOT-563
※ SPN1022S56RGB : Tape Reel ; Pb – Free, Halogen - Free
Part Marking 22
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gat...