MDF7N50TH

MDF7N50 N-channel MOSFET 500V MDF7N50 N-Channel MOSFET 500V, 7.0 A, 0.9Ω General Description The MDF7N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF7N50 is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 500V ID = 7.0A RDS(ON) ≤ 0.9Ω @ VGS = 10V @ VGS = 10V Applications Power Supply HID Lighting D G G D S S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (※) Pulsed Drain Current Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy (4) (1) Symbol VDSS VGSS TC=25 C TC=100 C o o Rating 500 ±30 7.0 4.2 28 36 0.29 4.5 270 -55~150 Unit V V A A A W W/ oC V/ns mJ o ID IDM TC=25oC Derate above 25 oC PD Dv/dt EAS TJ, Tstg Junction and Storage Temperature Range ※ Id limited by maximum junction temperature C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (1) (1) Symbol RθJA RθJC Rating 62.5 3.5 Unit o C/W Dec. 2009. Version 1.2 1 MagnaChip Semiconductor Ltd. MDF7N50 N-channel MOSFET 500V Ordering Information Part Number MDF7N50TH Temp. Range -55~150oC Package TO-220F Packing Tube RoHS Status Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gat...