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K3511 Dataheets PDF



Part Number K3511
Manufacturers Renesas
Logo Renesas
Description MOS FIELD EFFECT TRANSISTOR
Datasheet K3511 DatasheetK3511 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3511 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3511 2SK3511-S PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note FEATURES • Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP. • Built-in gate protection diode 2SK3511-ZJ 2SK3511-Z Note TO-220SMD package is.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3511 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3511 2SK3511-S PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note FEATURES • Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP. • Built-in gate protection diode 2SK3511-ZJ 2SK3511-Z Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 75 ±20 ±83 ±260 100 1.5 150 –55 to +150 52 250 V V A A W W °C °C A mJ (TO-262) Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 35 V, RG = 25 Ω, VGS = 20 → 0 V (TO-263, TO-220SMD) THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.25 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15617EJ1V0DS00 (1st edition) Date Published May 2002 NS CP(K) Printed in Japan © 2001 2SK3511 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 60 V VGS = 10 V ID = 83 A IF = 83 A, VGS = 0 V IF = 83 A, VGS = 0 V di/dt = 100 A/ µs TEST CONDITIONS VDS = 75 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 42 A VGS = 10 V, ID = 42 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 38 V, ID = 42 A VGS = 10 V RG = 0 Ω 2.0 21 3.0 45 9.5 5900 810 400 30 21 72 12 100 24 35 1.1 70 200 12.5 MIN. TYP. MAX. 10 ±10 4.0 UNIT µA µA V S mΩ pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG VGS RL VDD VDS 90% 90% 10% 10% VGS Wave Form 0 10% VGS 90% BVDSS IAS ID VDD VDS VGS 0 τ τ = 1 µs Duty Cycle ≤ 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD 2 Data Sheet D15617EJ1V0DS 2SK3511 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 dT - Percentage of Rated Power - % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA PT - Total Power Dissipation - W TC - Case Temperature - °C 1000 ID(DC) ID(pulse) =1 0µ 10 s 0µ s 1m s 10 m s ID - Drain Current - A 100 ited im V )L 10 (on S RD GS = V at PW DC 10 Power Dissipation Limited 1 TC = 25˚C Single Pulse 1 10 VDS - Drain to Source Voltage - V 100 0.1 0.1 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - °C/W 10 Rth(ch-A) = 83.3˚C/W 1 Rth(ch-C) = 1.25˚C/W 0.1 0.01 10 µ Single Pulse 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D15617EJ1V0DS 3 2SK3511 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 300 Pulsed 250 VGS = 10 V ID - Drain Current - A 1000 V D S = 10 V 100 ID - Drain Current - A 200 150 100 50 0 0 1 2 3 4 5 6 7 8 10 T A = 150°C 75°C 25°C − 55°C 1 2 3 4 5 6 7 1 0.1 VDS - Drain to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 4.0 VGS(off) – Gate Cut-off Voltage - V 100 | yfs | - Forward Transfer Admittance - S 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -75 -25 25 75 125 175 V DS = 10 V ID = 1 mA VDS = 10 V Pulsed 10 1 TA = 150°C 75°C 25°C −55°C 0.1 0.01 0.01 0.1 1 10 100 Tch - Channel Temperature - °C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ Pulsed ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 20 18 16 14 12 10 8 6 4 2 0 0.1 1 10 100 1000 VGS = 10 V .


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