BSC030N03LSG

BSC030N03LS G OptiMOS™3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance Avalanche rated Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Type BSC030N03LS G Package PG-TDSON-8 Marking 030N03LS Product Summary V DS R DS(on),max ID 30 3 100 PG-TDSON-8 V mΩ A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C V GS=10 V, T A=25 °C, R thJA=50 K/W 2) Pulsed drain current3) Avalanche current, single pulse 4) Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage 1) Value 100 77 98 62 Unit A 23 400 50 75 6 ±20 mJ kV/µs V I D,pulse I AS E AS dv /dt V GS T C=25 °C T C=25 °C I D=50 A, R GS=25 Ω I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C J-STD20 and JESD22 Rev. 1.27 page 1 2009-10-22 BSC030N03LS G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 °C T A=25 °C, R thJA=50 K/W 2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j, T stg Value 69 2.5 -55 ... 150 55/150/56 °C Unit W Parameter Symbol Conditions min. Values typ. max. Unit Ther...