Document
BSC032N03S G
OptiMOS™2 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters • Qualified according to JEDEC1 for target applications • Logic level / N-channel • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanche rated; dv/dt rated • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type BSC032N03S G Package PG-TDSON-8 Marking 32N03S
Product Summary V DS R DS(on),max ID 30 3.2 100 PG-TDSON-8 V mΩ A
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C T A=25 °C, R thJA=45 K/W 2) Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage Power dissipation I D,pulse E AS dv /dt V GS P tot T C=25 °C T A=25 °C, R thJA=45 K/W 2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j, T stg T C=25 °C3) I D=50 A, R GS=25 Ω I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C Value 100 77 23 200 550 6 ±20 78 2.8 -55 ... 150 55/150/56 °C mJ kV/µs V W Unit A
Rev. 1.64
page 1
2009-10-22
BSC032N03S G
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case R thJC bottom top Thermal resistance, junction - ambient R thJA minimal footprint 6 cm2 cooling area2) 1.6 18 62 45 K/W Values typ. max. Unit
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=70 µA V DS=30 V, V GS=0 V, T j=25 °C V DS=30 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=50 A V GS=10 V, I D=50 A Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=50 A 30 1.2 1.6 0.1 2 1 µA V
0.3 57
10 10 3.9 2.7 0.6 113
100 100 4.9 3.2 1.2 Ω S nA mΩ
1) 2)
J-STD20 and JESD22
2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3)
See figure 3
Rev. 1.64
page 2
2009-10-22
BSC032N03S G
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 4) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total, sync. FET Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T C=25 °C V GS=0 V, I F=50 A, T j=25 °C V R=15 V, I F=I S, di F/dt =400 A/µs 0.84 50 200 1 V A Q gs Q g(th) Q gd Q sw Qg V plateau Q g(sync) Q oss V DS=0.1 V, V GS=0 to 5 V V DD=15 V, V GS=0 V V DD=15 V, I D=25 A, V GS=0 to 5 V 11 6.1 7.2 12 29 2.9 26 32 15 8.1 11 18 39 34 43 V nC nC C iss C oss Crss t d(on) tr t d(off) tf V DD=15 V, V GS=10 V, I D=25 A, R G=2.7 Ω V GS=0 V, V DS=15 V, f =1 MHz 3820 1360 173 7.5 7.0 32 5.4 5080 1810 260 11 11 48 8 ns pF Values typ. max. Unit
Reverse recovery charge
Q rr
-
-
15
nC
4)
See figure 16 for gate charge parameter definition
Rev. 1.64
page 3
2009-10-22
BSC032N03S G
5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS
200
10 V 4.5 V
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS
10
3V 3.2 V 3.4 V
4V
160
8
3.7 V 3.7 V
R DS(on) [mΩ ]
120
6
4V
I D [A]
80
3.4 V
4
4.5 V
10 V 3.2 V
40
3V 2.8 V
2
0 0 1 2 3
0 0 50 100
V DS [V]
I D [A]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
160
8 Typ. forward transconductance g fs=f(I D); T j=25 °C
180
150 120 120
80
g fs [S]
150 °C 25 °C
I D [A]
90
60 40 30
0 0 1 2 3 4
0 0 50 100
V GS [V]
I D [A]
Rev. 1.64
page 4
2009-10-22
BSC032N03S G
1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS≥10 V
80 100
60
80
P tot [W]
40
I D [A]
0 40 80 120 160
60
40 20 20
0
0 0 40 80 120 160
T C [°C]
T C [°C]
3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p
103
limited by on-state resistance 1 µs 10 µs
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
101
10
2
100
0.5
I D [A]
DC 1 ms
Z thJC [K/W]
100 µs
0.2 0.1 0.05
101
10 ms
10-1
0.02 0.01 single pulse
100 10
-1
10-2 10
0
10
1
10
2
10-5
10-4
10-3
10-2
10-1
100
V DS [V]
t p [s]
Rev. 1.64
page 5
2009-10-22
BSC032N03S G
9 Drain-source on-state resistance R DS(on)=f(T j); I D=50 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D
6 2.5
5 2
4
700 µA 98 %
R DS(on) [mΩ ]
V GS(th) [V]
1.5
70 µA
3
typ
1
2
1
0.5
0 -60 -20 20 60 100 140 180
0 -60 -20 20 60 100 140 180
T j [°C]
T j [°C]
11 Typ. capacitances C =f(V DS); V GS=0 V; f.