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MTC90 MTA90 MTK90 MTX90 MT90 Thyristor Modules
Features:
n n n n n n Isolated mounting base 2500V~ Pressure contact technology with Increased power cycling capability Space and weight savings AC/DC Motor drives Various rectifiers DC supply for PWM inverter
IT(AV) VDRM/VRRM ITSM I2t
90A 600~1800V 2.0A×103 20.4A2 S*103
Typical Applications
SYMBOL
CHARACTERISTIC
EM
TEST CONDITIONS T j(°C) VALUE Type Min Max 90 125 125 141 125 600 1600 125 10 2.00 125 20.4 0.8 125 3.01 25 125 1.70 800 125 100 30 25 1.0 20 125 0.2 0.280 0.15 2500 4.0 6.0 -40 160 217F3/223F3 125 100 2.5 100
UNIT
IT(AV) IT(RMS) VDRM VRRM IDRM IRRM ITSM It VTO rT VTM dv/dt
2
Mean on-state current RMS on-state current Repetitive peak off-state voltage Repetitive peak reverse voltage
180° half sine wave 50Hz Single side cooled, Tc=85°C
A A
Repetitive peak current Surge on-state current
2
HS
at VDRM at VRRM 10ms half sine wave VR=60%VRRM ITM=270A VDM=67%VDRM ITM =180A,Gate source 1.5A tr ≤0.5μs Repetitive VA=12V, IA=1A VDM=67%VDRM Single side cooled Single side cooled 50Hz,R.M.S,t=1min,Iiso:1mA(MAX)
VDRM&VRRM tp=10ms VDSM&VRSM= VDRM&VRRM+200V respectively
V
mA KA A s*103 V mΩ V V/μs
2
I T for fusing coordination Threshold voltage
On-state slop resistance Peak on-state voltage
TE C
Critical rate of rise of off-state voltage di/dt Critical rate of rise of on-state current IGT Gate trigger current VGT IH Gate trigger voltage Holding current VGD Non-trigger gate voltage Rth(j-c) Rth(c-h) Viso Fm Mounting torque (M6) T stg Wt Outline Stored temperature Weight Thermal resistance Junction to case Thermal resistance case to heat sink Isolation voltage Thermal connection torque (M5)
A/μs
mA V mA V °C /W °C /W V N·m N·m °C g
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MTC90 MTA90 MTK90 MTX90 MT90
MTC90 Peak On-state Voltage Vs.Peak On-state Current 3.8 Iinstantaneous on-state voltage,volts Transient thermal impedance,°C/W 3.4 3 2.6 2.2 1.8 1.4 1 0.6 10 100 Instantaneous on-state currant,amperes TJ =125°C 0.3 0.25 0.2 0.15 0.1 0.05 0 0.001 0.28 Impedance Vs.Time Max. junction To case Thermai
1000
EM
0.01 0.1 time,S 1
10
Fig.1
Max. Power Dissipation MTC90 Vs.Mean On-state Current 240 Max on-state dissipation,watts 200 160 120 80 40 0 0 20 40 180
0
Fig.2
Max. case TemperatureMTC90 Vs.Mean On-state Current
140 120 100 80 60 40 20 0
Conduction Angle
HS
90 60 60 80 100 120 0
Case temperature,°C
180
120
0
180
Conduction Angle
30
30
60
90
120
180
TE C
Mean on-state current,amperes
30 60 90 120 150 Mean on-state current,amperes
180
Fig.3
Fig.4
Max. case Temperature Vs.Mean On-state Current MTC90 140 120 Case temperature,°C 100
Conduction Angle 360
MTC90 Max. Power Dissipation Vs.Mean On-state Current
360
200
DC
Max on-state dissipation,watts
160
270
180
Conduction Angle
120
120
90
80 60 40 20 0 30 0 60 90 120 180 270 DC
60
80
30
40
0 0 20 40 60 80 100 120 140 Mean on-state current,amperes
30 60 90 120 150 180 210 240 270 Mean on-state current,amperes
Fig.5
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Fig.6
MTC90 MTA90 MTK90 MTX90 MT90
Surge Current 2.0 Vs.Cycles 2.2 2 Total peak half-sine surge current,kA Maximum I2t(Kamps2,secs) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 1 10 Cycles at 50Hz
21 25
2 2 I t 20 Vs.Time
17
13
9
EM
5 1
100
10
Time,m.seconds
Fig.7
Gate characteristic at 25°C junction temperature 18 16 Gate voltage,VGT,V 14 12 10 8 6 4 2 0 0 4 PG 2W max. PGM =100W (100μ s pulse)
Fig.8
Gate Trigger Zone at varies temperature 2.5V,100MA
4
3.5
-30°C
HS
2.5 2 min. 1.5 1 0.5 0 8 12 16 20 0 30
Gate voltage,VGT, V
3
-10°C
25°C
125°C
TE C
Gate current,IGT,A
60
90
120
150
180
Gate current,IGT,mA
Fig.9
Fig.10
Outline:
3-M5
G1 K1
K2 G2
1
2
3
1
3 2
217F3 223F3
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