D2140

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2140 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 140V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1421 APPLICATIONS ·Designed for high power amplifications. ·Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w w s c s .i UNIT 140 V 140 V 5 V 7 A 12 A 80 W n c . i m e IC Collector Current-Continuous ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2140 TYP. MAX UNIT VCE(sat) VBE(on) ICBO Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.0 V Base -Emitter On Voltage IC= 5A; VCE= 5V 1.8 V μA μA Collector Cutoff Current VCB= 140V; IE= 0 50 IEBO hFE-1 Emitter Cutoff Current VEB= 3V; IC= 0 IC= 20mA; VCE= 5V 20 50 DC Current Gain hFE-2 DC Current Gain IC= 1A; VCE= 5V hFE-3 DC Current Gain COB Collector Output Capacitance fT Current-Gain—Bandwidth Product ‹ hFE-2Classifications Q 60-120 S 80-160 w P ww s c s .i IC= 5A; VCE=...