AM5853

AiT Semiconductor Inc. www.ait-ic.com AM5853 MOSFET+ SCHOTTKY DIODE -20V P-CHANNEL ENHANCEMENT MODE   DESCRIPTION The AM5853 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density. Advanced trench technology. FEATURES  MOSFET -20V/-3.5A, RDS(ON) ＜ 70mΩ@VGS = -4.5V -20V/-2.4A, RDS(ON) ＜ 95mΩ@VGS = -2.5V -20V/-1.8A, RDS(ON) ＜ 125mΩ@VGS = -1.8V  SCHOTTKY VKA =20V, VF0.43(Typ.)@IF =1A    Super high density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Available in DFN8 (3x2) Package This high density process is especially tailored to minimize on-state resistance. The AM9435 is particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package. The AM5853 is available in DFN8 (3x2) Package APPLICATION    Battery Powered System Notebook Power Management Cell Phone ORDERING INFORMATION Package Type DFN8 Note J8 Part Number AM5853J8R AM5853J8VR P-CHANNEL MOSFET R: Tape & Reel V: Green Package AiT provides all Pb free products Suffix “ V “ means Green Package REV1.0 - MAR 2010 RELEASED – -1-   AiT Semiconductor Inc. www.ait-ic.com AM5853 MOSFET+ SCHOTTKY DIODE -20V P-CHANNEL ENHANCEMENT MODE   PIN DESCRIPTION Top View Pin # 1 2 3 4 5 6 7 8 Symbol A A S G D D K K Anode Anode Source Gate Drain Drain Cathode Cathode Function REV1.0 - MAR 2010 RELEASED – -2-   AiT Semiconductor Inc. ww...