ME75N80C

ME75N80C(-G) N-Channel Enhancement Mode MOSFET VDS=80V RDS(ON), Vgs@10V,Ids@40A = 11mΩ FEATURES Minimize input capacitance and gate charge Specially designed for DC/DC converters and DC motor control PIN CONFIGURATION (TO-220) Top View e Ordering Information: ME75N80ED (Pb-free) ME75N80ED-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Source-drain Current Power Dissipation TC=25℃ TA=25℃ TC=25℃ TC=100℃ Symbol VDSS VGSS ID IDM ISD PD TJ, Tstg EAS RθJA RθJC Limit 80 ±20 75 60 300 75 75 4 -55 to 175 400 T≦10 sec Steady State 2 7.3 37 Unit V V A A A W ℃ mJ Operating Junction and Storage Temperature Range Avalanche Energy with Single Pulseb Thermal Resistance-Junction to Ambient* Thermal Resistance-Junction to Case a. Pulse width limited by safe operating area b. Starting Tj=25℃, ID=30A, VDD=37.5V ℃/W Jan, 2009 – Version 4.3 01 ME75N80C(-G) N-Channel Enhancement Mode MOSFET Electrical Characteristics Symbol STATIC BVDSS VGS(th) IGSS IDSS RDS(ON) Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-Resistance* Forward Transconductance* Diode Forward Voltage * VGS=0V, ID=250μA VDS=VGS, ID=250μA VGS=±20V VDS=Max Rating, VGS=0V VGS=10V, ID=40A VDS=15V, ID=40A ISD=25A, VGS=0V 8.5 10 1.5 80 4.0 6.5 ±100 1 11 V V nA μA mΩ S V Parameter Limit Min Typ Max Unit GFS VSD ...