N-Channel Enhancement Mode MOSFET
ME75N80C(-G)
N-Channel Enhancement Mode MOSFET
VDS=80V RDS(ON), Vgs@10V,Ids@40A = 11mΩ
FEATURES
Minimize input capacita...
Description
ME75N80C(-G)
N-Channel Enhancement Mode MOSFET
VDS=80V RDS(ON), Vgs@10V,Ids@40A = 11mΩ
FEATURES
Minimize input capacitance and gate charge Specially designed for DC/DC converters and DC motor control
PIN
CONFIGURATION
(TO-220) Top View
e Ordering Information: ME75N80ED (Pb-free)
ME75N80ED-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Source-drain Current Power Dissipation TC=25℃ TA=25℃ TC=25℃ TC=100℃
Symbol
VDSS VGSS ID IDM ISD PD TJ, Tstg EAS RθJA RθJC
Limit
80 ±20 75 60 300 75 75 4 -55 to 175 400 T≦10 sec Steady State 2 7.3 37
Unit
V V A A A W ℃ mJ
Operating Junction and Storage Temperature Range Avalanche Energy with Single Pulseb Thermal Resistance-Junction to Ambient* Thermal Resistance-Junction to Case a. Pulse width limited by safe operating area b. Starting Tj=25℃, ID=30A, VDD=37.5V
℃/W
Jan, 2009 – Version 4.3
01
ME75N80C(-G)
N-Channel Enhancement Mode MOSFET
Electrical Characteristics
Symbol
STATIC BVDSS VGS(th) IGSS IDSS RDS(ON) Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-Resistance* Forward Transconductance* Diode Forward Voltage * VGS=0V, ID=250μA VDS=VGS, ID=250μA VGS=±20V VDS=Max Rating, VGS=0V VGS=10V, ID=40A VDS=15V, ID=40A ISD=25A, VGS=0V 8.5 10 1.5 80 4.0 6.5 ±100 1 11 V V nA μA mΩ S V
Parameter
Limit
Min
Typ
Max
Unit
GFS
VSD ...
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