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A1320

Toshiba Semiconductor

2SA1320

2SA1320 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1320 High Voltage Switching Applications C...


Toshiba Semiconductor

A1320

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Description
2SA1320 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1320 High Voltage Switching Applications Color TV Chroma Output Applications High voltage: VCEO = −250 V Low Cre: 1.8 pF (max) Complementary to 2SC3333 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulsed Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating −250 −250 −5 −50 −100 −20 0.6 150 −55~150 Unit V V V mA mA W °C °C JEDEC JEITA TOSHIBA TO-92 SC-43 2-5F1B Weight: 0.21 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequenc...




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