STM4532

S T M4532 S amHop Microelectronics C orp. Mar.30, 2005 V er1.1 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S 30V P R ODUC T S UMMAR Y (P -C hannel) V DS S -30V ID 5.5A R DS (ON) ( m W ) Max ID -4.5A R DS (ON) ( m W ) Max 40@ V G S = 10V 50@ V G S = 4.5V D1 8 55@ V G S = -10V 85@ V G S = -4.5V D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG N-C hannel P-C hannel 30 20 5.5 23 1.7 2.0 -55 to 150 -30 20 -4.5 -18 -1.7 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R £cJA 62.5 C /W 1 S T M4532 N-Channel E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 6A V GS =4.5V, ID = 5.2A V DS = 5V, V GS = 10V V DS = 10V, ID = 6.0A Min Typ C Max Unit 30 1 100 0.8 28 40 15 6 510 155 127 1.8 40 50 V uA nA V m ohm m ohm ON CHAR ACTE R I...