FDC8602 Dual N-Channel Shielded Gate PowerTrench® MOSFET
May 2013
FDC8602
Dual N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 1.2 A, 350 mΩ Features General Description
This N-Channel MOSFET advanced is produced using Fairchild that Semiconductor‘s PowerTrench® process
Shielded Gate MOSFET Technology Max rDS(on) = 350 mΩ at VGS = 10 V, ID = 1.2 A ...
