Document
FDC855N N-Channel, Logic Level, PowerTrench® MOSFET
January 2008
FDC855N
Single N-Channel, Logic Level, PowerTrench MOSFET 30V, 6.1A, 27mΩ
Features
Max rDS(on) = 27mΩ at VGS = 10V, ID = 6.1A Max rDS(on) = 36mΩ at VGS = 4.5V, ID = 5.3A SuperSOTTM -6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick). RoHS Compliant
tm
®
General Description
This N-Channel Logic Level MOSFET is an efficient solution for low voltage and battery powered applications. Utilizing Fairchild Semiconductor’s advanced PowerTrench® process, this device possesses minimized on-state resistance to optimize the power consumption. They are ideal for applications where in-line power loss is critical.
Application
Power Management in Notebook, Hard Disk Drive
S D D
D
D
D
D
SuperSOT
TM-6
G D D Pin 1
G S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation (Steady State) (Steady State) (Note 1a) (Note 1b) TA = 25°C (Note 1a) Ratings 30 ±20 6.1 20 1.6 0.8 -55 to +150 Units V V A W °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 30 78 °C/W
Package Marking and Ordering Information
Device Marking .855 Device FDC855N Package SuperSOT-6 Reel Size 7” Tape Width 8 mm Quantity 3000 units
©2008 Fairchild Semiconductor Corporation FDC855N Rev.C
1
www.fairchildsemi.com
FDC855N N-Channel, Logic Level, PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VGS = 0V, VDS = 24V, TC = 125°C VGS = ±20V, VDS = 0V 30 24 1 250 ±100 V mV/°C µA nA
On Characteristics
VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA ID = 250µA, referenced to 25°C VGS = 10V, ID = 6.1A VGS = 4.5V, ID = 5.3A VGS = 10V, ID = 6.1A, TJ =125°C VDD = 10V, ID = 6.1A 1.0 2.0 -6 20.7 28.2 30.1 20 27.0 36.0 39.3 S mΩ 3.0 V mV/°C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 493 108 62 1.0 655 145 95 pF pF pF Ω
Switching Characteristics
td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Total Gate Charge at 5V Gate to Source Charge Gate to Drain “Miller” Charge VGS = 0V to 10V VGS = 0V to 5V VDD = 15V, ID = 6.1A VDD = 15V, ID = 6.1A, VGS = .