FDC8884

FDC8884 N-Channel Power Trench® MOSFET April 2015 FDC8884 N-Channel Power Trench® MOSFET 30 V, 6.5 A, 23 mΩ Features „ Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A „ Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 6.0 A „ High performance trench technology for extremely low rDS(on) „ Fast switching speed „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance. Application „ Primary Switch S D D Pin 1 G D D SuperSOTTM -6 S4 D5 D6 3G 2D 1D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) TC = 25 °C -Continuous TA = 25 °C -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics (Note 3) (Note 1a) (Note 1a) (Note 1b) Ratings 30 ±20 8.0 6.5 25 1.6 0.8 -55 to +150 Units V V A W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 30 (Note 1a) 78 °C/W Device Marking .884 Device FDC8884 Package SSOT-6 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation 1 FDC8884 Rev.1.3 www.fairchildsemi.com FDC8884 N-Channel Power Trench® MOSFET SS SF DS DF G SS SF DS DF G Electrical Characteristics TJ = 25 °C unles...