FDC8886 N-Channel Power Trench® MOSFET
April 2015
FDC8886
N-Channel Power Trench® MOSFET
30 V, 6.5 A, 23 mΩ
Features
General Description
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A High performance trench technology for extremely low rDS(on) Fast switching speed RoHS Compliant
This N-Channel MO...
