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6MBP75VBA060-50 Dataheets PDF



Part Number 6MBP75VBA060-50
Manufacturers Fuji Electric
Logo Fuji Electric
Description IGBT MODULE
Datasheet 6MBP75VBA060-50 Datasheet6MBP75VBA060-50 Datasheet (PDF)

http://www.fujielectric.com/products/semiconductor/ 6MBP75VBA060-50 IGBT MODULE (V series) 600V / 75A / IPM Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs • Low power loss and soft switching • Compatible with existing IPM-N series packages • High performance and high reliability IGBT with overheating protection • Higher reliability because of a big decrease in number of parts in built-in control circuit IGBT Modules Maximum Ratings .

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http://www.fujielectric.com/products/semiconductor/ 6MBP75VBA060-50 IGBT MODULE (V series) 600V / 75A / IPM Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs • Low power loss and soft switching • Compatible with existing IPM-N series packages • High performance and high reliability IGBT with overheating protection • Higher reliability because of a big decrease in number of parts in built-in control circuit IGBT Modules Maximum Ratings and Characteristics Absolute Maximum Ratings (TC =25ºC, VCC =15V unless otherwise specified) Items Collector-Emitter Voltage (*1) Short Circuit Voltage Collector Current DC 1ms Duty=100% (*2) 1 device (*3) Symbol VCES VSC Ic Ic pulse -Ic Pc VCC Vin VALM IALM Tj Topr Tstg Tsol Viso Min. 0 200 -0.5 -0.5 -0.5 -20 -40 Max. 600 400 75 150 75 198 20 VCC+0.5 VCC 20 150 110 125 260 AC2500 1.7 Units V V A A A W V V V mA ºC ºC ºC ºC Vrms Nm Collector Power Dissipation Supply Voltage of Pre-Driver (*4) Input Signal Voltage (*5) Alarm Signal Voltage (*6) Alarm Signal Current (*7) Junction Temperature Operating Case Temperature Storage Temperature Solder Temperature (*8) Isolating Voltage (*9) Screw Torque Mounting (M4) Note *1: VCES shall be applied to the input voltage between terminal P-(U,V, W) and (U,V, W)-N. Note *2: Duty=125ºC/Rth(j-c)D /(I F×VF Max.)×100 Note *3: PC=125ºC/Rth(j-c)Q Note *4: VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13. Note *5: Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16~18 and 13. Note *6: VALM shall be applied to the voltage between terminal No.2 and 1, 6 and 5, 10 and 9, 19 and 13. Note *7: I ALM shall be applied to the input current to terminal No.2,6,10 and 19. Note *8: Immersion time 10±1sec. 1time. Note *9: Terminal to base, 50/60Hz sine wave 1minute. 1 6MBP75VBA060-50 http://www.fujielectric.com/products/semiconductor/ IGBT Modules Electrical Characteristics (Tj=25ºC, VCC=15V unless otherwise specified) Items Collector Current at off signal input Inverter Collector-Emitter saturation voltage Forward voltage of FWD Symbol ICES VCE(sat) VF ton toff trr Iccp Iccn Vinth(on) Input signal threshold voltage Vinth(off) Over Current Protection Level IOC Over Current Protection Delay time tdOC Short Circuit Protection Delay time tSC IGBT Chips Over Heating Protection Temperature Level TjOH Over Heating Protection Hysteresis TjH Under Voltage Protection Level VUV Under Voltage Protection Hysteresis VH tALM(OC) tALM(UV) Alarm Signal Hold Time tALM(TjOH) Resistance for current limit RALM Supply current of P-side pre-driver (per one unit) Supply current of N-side pre-driver Conditions VCE=600V IC=75A IF=75A Terminal Chip Terminal Chip Min. 1.1 1.2 1.5 113 150 11.0 0.2 1.0 2.5 5.0 960 Typ. 1.4 1.8 1.4 1.7 5 2 20 0.5 2.0 4.0 8.0 1265 Max. 1.0 2.0 2.4 2.1 0.3 15 45 1.6 1.9 3 12.5 2.4 4.9 11.0 1570 Units mA V V V V µs µs µs mA mA V V A µs µs ºC ºC V V ms ms ms Ω Switching time VDC=300V, Tj=125ºC Ic=75A VDC=300V IF=75A Switching Frequency= 0-15kHz Tc=-20~110ºC Vin-GND ON OFF Tj=125ºC Tj=125ºC Tj=125ºC Surface of IGBT Chips ALM-GND Tc=-20~110ºC VCC 10V Thermal Characteristics (TC = 25ºC) Items Junction to Case Thermal Resistance (*10) Case to Fin Thermal Resistance with Compound Note *10: For 1device, the measurement point of the case is just under the chip. Inverter IGBT FWD Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) Min. - Typ. 0.05 Max. 0.63 0.97 - Units °C/W °C/W °C/W Noise Immunity (VDC=300V, VCC=15V) Items Common mode rectangular noise Conditions Pulse width 1μs, polarity ±, 10 minute Judge : no over-current, no miss operating Min. ±2.0 Typ. Max. Units kV Recommended Operating Conditions Items DC Bus Voltage Power Supply Voltage of Pre-Driver Arm shoot through blocking time for IPM's input signal Screw Torque (M4) Symbol VDC VCC tdead Min. 13.5 1.0 1.3 Typ. 15.0 Max. 400 16.5 1.7 Units V V µs Nm 2 6MBP75VBA060-50 Block Diagram http://www.fujielectric.com/products/semiconductor/ IGBT Modules VccU VinU ALMU GNDU VccV VinV ALM V GNDV VccW VinW ALM W GNDW Vcc VinX Pre-Driver R ALM Pre-Driver R ALM Pre-Driver R ALM Pre-Driver P U V W GND VinY Pre-Driver VinZ Pre-Driver ALM R ALM N Pre-drivers include following functions 1. Amplifier for driver 2. Short circuit protection 3. Under voltage lockout circuit 4. Over current protection 5. IGBT chip over heating protection 3 6MBP75VBA060-50 Characteristics (Representative) Power supply current vs. Switching frequency Tj=25ºC (typ.) 60 3 http://www.fujielectric.com/products/semiconductor/ IGBT Modules Input signal threshold voltage vs. Power supply boltage (typ.) Tc=25~125ºC 2.5 Power supply current : Icc [mA] 40 Vcc=17V Vcc=15V Vcc=13V Input signal threshold voltage : Vinth (on), Vinth (off) [V] 50 N-side P-side 2 Vinth (off) 1.5 30 Vinth (on) 1 20 10 Vcc=17V Vcc=15V Vcc=13V 0.5 0 0 5 10 15 20 25 0 12 13 14 .


STB80NF55-08T4 6MBP75VBA060-50 CS25M20SSNSKLG


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