HFA9N90

HFA9N90 July 2013 BVDSS = 900 V HFA9N90 900V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 55 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ7\S#9GS=10V ‰ 100% Avalanche Tested RDS(on) typ ȍ ID = 9.0 A TO-247 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC=25୅ unless otherwise specified Parameter Value 900 Units V A A A V mJ A mJ V/ns W W/ఁ͑ ఁ͑ ఁ͑ – Continuous (TC = 25ఁ͚͑ – Continuous (TC = 100ఁ͚͑ – Pulsed (Note 1) 9.0* 5.7* 36* ρͤ͑͡ (Note 2) (Note 1) (Note 1) (Note 3) 900 9.0 28 4.0 110 0.88 -55 to +150 300 Power Dissipation (TC = 25ఁ͚͑ ͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds *Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol RșJC RșJA Junction-to-Case Junction-to-Ambient Parameter Typ. --Max. 1.11 40 ఁ͠Έ͑ Units క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝ͻΦΝΪ͑ͣͤ͑͢͡ HFA9N90 Electrical Characteristics TC=25 qC Symbol Parameter unless otherwise specified Test C...