IRFZ46

IRFZ46 HEXFET ® Power MOSFET Dynamic dv/dt Rating 175 Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements VDSS=50V RDS(on)=0.024Ω ID=50 * A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter ID@ Tc=25 ID@ Tc=100 IDM PD @ Tc=25 VGS EAS dv/dt TJ TSTG Continuous Drain Current, VGS@10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw 300 (1.6mm from case) 10 Ibfin (1.1 Nm) Max. 50* 38 220 150 1.0 ±20 100 4.5 -55 to -175 W W/ V mJ V/ns Units A Thermal Resistance Parameter RӨJC RӨCS RӨJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Min. Typ. 0.50 Max. 1.0 62 Units /W www.artschip.com 1 IRFZ46 HEXFET ® Power MOSFET Electrical Characteristics @ TJ=25 Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr ...