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TSM160N10
100V N-Channel Power MOSFET
Description
TSM160N10 100V N-Channel Power MOSFET TO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 100 RDS(on)(mΩ) 5.5 @ VGS =10V ID (A) 160 Features ● ● ● ● Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.) Low Crss typical @ 260pF (Typ.) Block Diagram Ordering Information Part No. TSM160N10CZ C0 ...
Taiwan Semiconductor
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TSM160N10
100V N-Channel Power MOSFET
- Taiwan Semiconductor
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