TSM190N08

TSM190N08 75V N-Channel Power MOSFET TO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 75 RDS(on)(mΩ) 4.2 @ VGS =10V ID (A) 190 Features ● ● ● ● Advanced Trench Technology Low RDS(ON) 4.2mΩ (Max.) Low gate charge typical @ 160nC (Typ.) Low Crss typical @ 300pF (Typ.) Block Diagram Ordering Information Part No. TSM190N08CZ C0 Package TO-220 Packing 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC=25° C TC=70° C TA=25° C TA=70° C Drain Current-Pulsed Note 1 Avalanche Current, L=0.3mH Avalanche Energy, L=0.3mH TC=25° C TC=70° C TA=25° C TA=70° C IDM IAS, IAR EAS, EAR Symbol VDS VGS Limit 75 ±20 190 150 17 14 600 113 1900 250 160 2 1.3 -55 to +150 -55 to +150 Unit V V Continuous Drain Current ID A A A mJ Maximum Power Dissipation PD W Storage Temperature Range Operating Junction Temperature Range * Limited by maximum junction temperature TSTG TJ ° C ° C Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec Symbol RӨJC RӨJA Limit 0.5 62.5 Unit o o C/W C/W 1/4 Version: A12 TSM190N08 75V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Dynamic Total Ga...