TSM2611ED

TSM2611ED 20V Dual N-Channel MOSFET w/ESD Protected SOT-26 Pin Definition: 1. Source 1 6. Gate 1 2. Drain 1 5. Drain 2 3. Source 2 4. Gate 2 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 20 @ VGS = 4.5V 20 28 @ VGS = 2.5V ID (A) 6 5 Features ● ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On resistance ESD Protected HBM 2KV Block Diagram Application ● ● Portable Applications Battery Management Ordering Information Part No. TSM2611EDCX6 RFG Package SOT-26 Packing 3Kpcs / 7” Reel ` Dual N-Channel MOSFET Note: “G” denotes Halogen Free Product. Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o Symbol VDS VGS ID IDM IS o Limit 20 ±10 6 22 1 0.83 Unit V V A A A W TA=25 C TA=100 C PD TJ TJ, TSTG 0.3 +150 -55 to +150 o o C C Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature 2 b. Surface Mounted on a 1 in pad, t ≤ 10 sec. Symbol RӨJC RӨJA Limit 80 150 Unit o o C/W C/W 1/6 Version: A11 TSM2611ED 20V Dual N-Channel MOSFET w/ESD Protected Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Th...