30V P-Channel MOSFET
TSM4435B
30V P-Channel MOSFET
SOP-8
Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. ...
Description
TSM4435B
30V P-Channel MOSFET
SOP-8
Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
-30 21 @ VGS = -10V 35 @ VGS = -4.5V
ID (A)
-9.1 -6.9
Features
● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
● ● DC-DC Conversion Battery Switch
Ordering Information
Part No.
TSM4435BCS RL
Package
SOP-8
Packing
2.5Kpcs / 13” Reel P-Channel MOSFET
TSM4435BCS RLG SOP-8 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product
Absolute Maximum Rating (TA = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range
a,b o o
Symbol
VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C
Limit
-30 ±20 -9.1 -50 -2.1 2.5 1.6 +150 - 55 to +150
Unit
V V A A A W
o o
C C
Thermal Performance
Parameter
Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 10 sec.
Symbol
RӨJF RӨJA
Limit
22 50
Unit
o o
C/W C/W
1/6
Version: A11
TSM4435B
30V P-Channel MOSFET
Electrical Specifications (TA = 25oC unless otherwise noted)
Parameter
Static Drain-Source Breakdown Voltage Gate Threshold Voltage...
Similar Datasheet