TSM4539D

TSM4539D Complementary Enhancement MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) N-Channel P-Channel 30 28 @ VGS = 10V 42 @ VGS = 4.5V 65 @ VGS = -10V 90 @ VGS = -4.5V ID (A) 6.5 5.0 -4.2 -3.5 -30 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch PA Switch Ordering Information Part No. Package Packing TSM4539DCS RLG SOP-8 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product N-Channel P-Channel MOSFET Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS Pulsed Drain Current, Drain-Source Diode Forward Current Power Dissipation @ Ta = 25 C Operating Junction Temperature Operating Junction and Storage Temperature Range o Symbol VDS VGS ID IDM IS PD N-CH Limit 30 ±20 6.5 28 2.5 2.1 150 P-CH Limit -30 ±20 -4.2 -20 -1.9 2.1 Unit V V A A A W o o TJ TJ, TSTG C C -55 ~ +150 Thermal Performance Parameter Junction to Ambient Thermal Resistance Junction to Lead Thermal Resistance Symbol RӨJA RӨJL N-CH Limit 62.5 40 P-CH Limit 62.5 40 Unit o o C/W C/W Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board using 1 inch sq pad size, t ≤ 5sec. c. Surge Applied at Rated Load Conditions, Half-Wave, Single Phase, 60Hz. 1/4 Version: A12...