NVMFD5877NLWF

NVMFD5877NL, NVMFD5877NLWF Power MOSFET Features 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFD5877NLWF − Wettable Flanks Product AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free and are RoHS Compliant Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RYJ−mb (Notes 1, 2, 3, 4) Power Dissipation RYJ−mb (Notes 1, 2, 3) Continuous Drain Current RqJA (Notes 1 & 3, 4) Power Dissipation RqJA (Notes 1, 3) Pulsed Drain Current Tmb = 25°C Steady State Tmb = 100°C Tmb = 25°C Tmb = 100°C TA = 25°C Steady State TA = 100°C TA = 25°C TA = 100°C TA = 25°C, tp = 10 ms IDM TJ, Tstg IS EAS PD ID PD Symbol VDSS VGS ID Value 60 "20 17 12 23 12 6 5 3.2 1.6 74 −55 to +175 19 10.5 40 TL 260 °C A °C A mJ W 1 http://onsemi.com V(BR)DSS 60 V RDS(on) MAX 39 mW @ 10 V 60 mW @ 4.5 V Dual N−Channel D1 D2 ID MAX 17 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Unit V V A G1 W G2 S1 S2 A MARKING DIAGRAM D1 D1 S1 G1 S2 G2 5877xx AYWZZ D2 D2 D1 D1 D2 D2 Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain− to−Source Avalanche Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V, RG = 25 W) (IL(pk) = 14.5 A, L = 0.1 mH) (IL(pk) = 6.3 A, L = 2 mH) DFN8 5x6 (SO8FL) CASE 506BT Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 5877NL = Specific Device Code for NVMFD5877NL 5877LW = Specifi...