N-Channel MOSFET. FDN8601 Datasheet

FDN8601 Datasheet PDF, Equivalent


Part Number

FDN8601

Description

N-Channel MOSFET

Manufacture

TY Semiconductor

Total Page 2 Pages
PDF Download
Download FDN8601 Datasheet PDF


FDN8601 Datasheet
SMD Type
Product specification
FDN8601
100 V, 2.7 A, 109 m:
Features
„ Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A
„ Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A
„ High performance trench technology for extremely low rDS(on)
„ High power and current handling capability in a widely used
surface mount package
„ Fast switching speed
„ 100% UIL tested
„ RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been optimized for rDS(on), switching performance and
ruggedness.
Applications
„ Primary DC-DC Switch
„ Load Switch
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
100
±20
2.7
12
13
1.5
0.6
-55 to +150
Units
V
V
A
mJ
W
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
75
80
°C/W
Device Marking
8601
Device
FDN8601
Package
SSOT-3
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
http://www.twtysemi.com
4008-318-123
1of 2

FDN8601 Datasheet
SMD Type
Product specification
FDN8601
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
'BVDSS
'TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 PA, VGS = 0 V
ID = 250 PA, referenced to 25 °C
VDS = 80 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
100
V
68 mV/°C
1
±100
PA
nA
On Characteristics (Note 2)
VGS(th)
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 PA
ID = 250 PA, referenced to 25 °C
VGS = 10 V, ID = 1.5 A
VGS = 6 V, ID = 1.2 A
VGS = 10 V, ID = 1.5 A, TJ = 125 °C
VDS = 10 V, ID = 1.5 A
2.0
3.0
-8
85.4
117
143
8
4.0 V
mV/°C
109
175 m:
183
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
156 210
47 65
2.7 5
1.0
pF
pF
pF
:
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 50 V, ID = 1.5 A,
VGS = 10 V, RGEN = 6 :
VGS = 0 V to 10 V
VGS = 0 V to 5 V VDD = 50 V,
ID = 1.5 A
4.3 10
ns
1.3 10 ns
7.8 16 ns
3.4 10 ns
3 5 nC
1.8 3 nC
0.9 nC
0.8 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 1.5 A (Note 2)
0.81 1.3
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 1.5 A, di/dt = 100 A/Ps
29 46 ns
15 27 nC
Notes:
1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RTJC is guaranteed by design while RTCA is determined by the user's board design.
a) 80 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 180 °C/W when mounted on a
minimum pad.
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 3 A, VDD = 100 V, VGS = 10 V.
http://www.twtysemi.com
4008-318-123
2of 2


Features Datasheet pdf SMD Type Product specification FDN8601 100 V, 2.7 A, 109 m: Features „ Max r DS(on) = 109 m: at VGS = 10 V, ID = 1.5 A „ Max rDS(on) = 175 m: at VGS = 6 V , ID = 1.2 A „ High performance trench technology for extremely low rDS(on) High power and current handling capab ility in a widely used surface mount pa ckage „ Fast switching speed „ 100% U IL tested „ RoHS Compliant General De scription This N-Channel MOSFET is prod uced using Fairchild Semiconductor‘s advanced Power Trench® process that ha s been optimized for rDS(on), switching performance and ruggedness. Applicati ons „ Primary DC-DC Switch „ Load Swi tch MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to S ource Voltage Gate to Source Voltage -C ontinuous -Pulsed Single Pulse Avalanch e Energy Power Dissipation Power Dissip ation Operating and Storage Junction Te mperature Range (Note 3) (Note 1a) (Not e 1b) (Note 1a) Ratings 100 ±20 2.7 12 13 1.5 0.6 -55 to +150 Units V V A mJ.
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