N-Channel MOSFET
SMD Type
Product specification
FDN8601
100 V, 2.7 A, 109 m: Features
Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A ...
Description
SMD Type
Product specification
FDN8601
100 V, 2.7 A, 109 m: Features
Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed 100% UIL tested RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Applications
Primary DC-DC Switch Load Switch
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 3) (Note 1a) (Note 1b) (Note 1a) Ratings 100 ±20 2.7 12 13 1.5 0.6 -55 to +150 Units V V A mJ W °C
Thermal Characteristics
RTJC RTJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 75 80 °C/W
Package Marking and Ordering Information
Device Marking 8601 Device FDN8601 Package SSOT-3 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units
http://www.twtysemi.com
4008-318-123
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SMD Type
Product specification
FDN8601
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Chara...
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