SMK0160

SMK0160 Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features High Voltage : BVDSS=600V(Min.) Low Crss : Crss=3.4pF(Typ.) Low gate charge : Qg=3.9nC(Typ.) Low RDS(on) : RDS(on)=11.5Ω(Max.) G Package Code TO-92 G DS S TO-92 PIN Connection D Ordering Information Type No. SMK0160 Marking SMK0160 Marking Diagram SMK 0160 YWW Column 1,2 : Device Code Column 3 : Production Information e.g.) YWW -. YWW : Date Code (year, Week) Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature ② ② ① ① * Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD IAS EAS IAR EAR TJ Tstg Rating 600 ±30 0.3 0.18 1.2 625 0.3 53 0.3 1.1 150 -55~150 Unit V V A A A mW A mJ A mJ °C Characteristic Thermal resistance Junction-ambient Symbol Rth(J-A) ** Typ. - Max. 200 Unit °C/W ** Limited by maximum junction temperature KSD-T0A014-001 1 SMK0160 Electrical Characteristics (TC=25°C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time...