MDD3752RH

MDD3752 – P-Channel Trench MOSFET MDD3752 P-Channel Trench MOSFET, -40V, -43A, 17mΩ General Description The MDD3752 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. Low RDS(ON), Low Gate Charge can be offering superior benefit in the application. Features    VDS = -40V ID = -43A @VGS = -10V RDS(ON) < 17mΩ @ VGS = -10V < 25mΩ @ VGS = -4.5V Applications   Inverters General purpose applications D G S Absolute Maximum Ratings (TC =25o) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy Junction and Storage Temperature Range TC=25 C TC=100 C (Note 3) o o Symbol VDSS VGSS Rating -40 ±20 43 Unit V V A A A W (Note 2) TC=25 C TC=100 C o o ID IDM PD EAS TJ, Tstg 27 -90 50 20 128 -55~+150 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1) Symbol RθJA RθJC Rating 40 2.5 Unit o C/W November 2008. Version 1.0 1 MagnaChip Semiconductor Ltd. MDD3752 – P-Channel Trench MOSFET Ordering Information Part Number MDD3752RH Temp. Range -55~150oC Package D-PAK Packing Tape & Reel RoHS Status Halogen Free Electrical Characteristics (TJ =25oC unless otherwise noted) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Leakage ...