SMK0170I

SMK0170I Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features     High Voltage : BVDSS=700V(Min.) Low Crss : Crss=2.6pF(Typ.) Low gate charge : Qg=4.1nC(Typ.) Low RDS(ON) : RDS(ON)=15Ω(Max.) PIN Connection D Ordering Information Type No. SMK0170I Marking SMK0170 Package Code I-PAK G GD S S I-PAK Marking Diagram Column 1 : Device Code SMK0170 YWW Column 2 : Production Information e.g.) YWW -. Y : Year Code -. WW : Week Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) * Total Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature Symbol VDSS VGSS ID (TC=25℃) (TC=100℃) IDP PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 700 30 1.0 0.63 4.0 28 1.0 17 1.0 0.5 150 -55~150 Unit V V A A W A mJ A mJ C Characteristic Thermal resistance* Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-A) Typ. - Max. 4.46 62.5 Unit ℃/W KSD-T6Q007-000 1 SMK0170I Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Tur...