Semiconductor
SMK0860P
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS Features
• High Voltage: BVDSS=600V...
Semiconductor
SMK0860P
Advanced N-Ch Power MOSFET
SWITCHING
REGULATOR APPLICATIONS Features
High Voltage: BVDSS=600V(Min.) Low Crss : Crss=9.7pF(Typ.) Low gate charge : Qg=22nC(Typ.) Low RDS(on) :RDS(on)=1.2Ω(Max.)
PIN Connection
D
G
Ordering Information
Type No. SMK0860P Marking SMK0860 Package Code TO-220AB-3L GDS TO-220AB-3L S
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed)
*
Symbol
VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg
Rating
600 ±30 7.5 4.7 30 90 7.5 325 7.5 21.7 150 -55~150
Unit
V V A A A W A mJ A mJ °C
Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range
* Limited by maximum junction temperature
Characteristic
Thermal resistance Junction-case Junction-ambient
Symbol
Rth(J-C) Rth(J-a)
Typ.
-
Max
1.38 62.5
Unit
℃/W
KSD-T0P024-000
1
SMK0860P
Electrical Characteristics (TC=25°C unless otherwise noted)
Characteristic
Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ ④
Symbol
BVDSS VGS(th)...