SMK0460I

SMK0460I Advanced Power N-Ch MOSFET SWITCHING REGULATOR APPLICATIONS Features     High Voltage: BVDSS=600V(Min.) Low Crss : Crss=9.8pF(Typ.) Low gate charge : Qg=12nC(Typ.) Low RDS(on) :RDS(on)=2.5Ω(Max.) Type No. SMK0460I Marking SMK0460 Package Code I-PAK GD S S I-PAK PIN Connection D G Ordering Information Marking Diagram SMK0460 YWW Column 1 2 : Device Code Column 3: Production Information e.g.) YWW -. Y: Year Code -. WW: Week Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) * Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 600 30 4 2.53 16 48 4 225 4 10 150 -55~150 Unit V V A A A W A mJ A mJ C Drain Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-a) Typ. - Max 2.6 62.5 Unit ℃/W KSD-T6Q006-002 1 SMK0460I Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate-threshold voltage Drain-source leakage current Gate-source leakage Drain-Source on-resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay ti...