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SMK0965FJ

KODENSHI KOREA

Advanced N-Ch Power MOSFET

SMK0965FJ Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features     High Voltage : BVDSS=650V(Min.) ...


KODENSHI KOREA

SMK0965FJ

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SMK0965FJ Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features     High Voltage : BVDSS=650V(Min.) Low Crss : Crss=16pF(Typ.) Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.85Ω(Max.) G Package Code TO-220F-3L (J Forming) G DS TO-220F-3L PIN Connection D Ordering Information Type No. SMK0965FJ Marking SMK0965 S Marking Diagram Column 1 : Manufacturer AUK AUK GYMDD YMDD Δ SMK0965 SDB20D45 Column 2 : Production Information e.g.) GYMDD -. G : Factory management code -. YMDD : Date Code (year, month, date) Column 3 : Device Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature ② ② ① ① * Symbol VDSS VGSS ID TC=25C TC=100C IDM PD IAS EAS IAR EAR TJ Tstg Rating 650 30 9 5.5 36 40 9 250 9 11.6 150 -55~150 Unit V V A A A W A mJ A mJ C Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-A) Typ. - Max. 3.1 62.5 Unit C/W KSD-T0O068-000 1 SMK0965FJ Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductan...




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