SMK1260F

SMK1260F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features     High Voltage : BVDSS=600V(Min.) Low Crss : Crss=14.6pF(Typ.) Low gate charge : Qg=41nC(Typ.) Low RDS(on) : RDS(on)=0.65Ω(Max.) G Package Code TO-220F-3L GD S TO-220F-3L PIN Connection D Ordering Information Type No. SMK1260F Marking SMK1260 S Marking Diagram Column 1 : Manufacturer AUK AUK GYMDD YMDD Δ SMK1260 SDB20D45 Column 2 : Production Information e.g.) GYMDD -. G : Factory management code -. YMDD : Date Code (year, month, date) Column 3 : Device Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature ② ② ① ① * Symbol VDSS VGSS ID TC=25C TC=100C IDM PD IAS EAS IAR EAR TJ Tstg Rating 600 30 12 7.1 48 45 12 549 12 11.6 150 -55~150 Unit V V A A A W A mJ A mJ C Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-A) Typ. - Max. 2.7 62.5 Unit C/W KSD-T0O034-002 1 SMK1260F Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input ca...