Document
SMK1820D
Advanced N-Ch Power MOSFET
DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features
High Voltage: BVDSS=200V(Min.) Low Crss : Crss=55pF(Typ.) Low gate charge : Qg=22nC(Typ.) Low RDS(on) :RDS(on)=0.17Ω(Max.)
Type No. SMK1820D Marking SMK1820 Package Code TO-252
PIN Connection
D D
Ordering Information
G S
G
TO-252
S
Marking Diagram
Column 1 2 : Device Code Column 3: Production Information e.g.) YWW -. Y: Year Code
-. WW: Week Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Drain-source voltage Gate-source voltage Drain current (DC)
*
Symbol
VDSS VGSS ID (TC=25℃) (TC=100℃) IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg
Rating
200 30 18 11.3 72 70 18 453 18 13.9 150 -55~150
Unit
V V A A A W A mJ A mJ C
Drain current (Pulsed)
*
Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range
* Limited by maximum junction temperature
Characteristic
Thermal resistance Junction-case
**
Symbol
Rth(J-C) Rth(J-A)
Typ.
-
Max
1.79 50
Unit
℃/W
Junction-ambient
** When mounted on the minimum pad size recommended (PCB Mount)
KSD-T6O013-001
1
SMK1820D
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic
Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ ④
Symbol
BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
Test Condition
ID=250A, VGS=0 ID=250A, VDS= VGS VDS=200V, VGS=0V VDS=160V, VGS=0V, TC=125℃ VDS=0V, VGS=30V VGS=10V, ID=9.0A VDS=10V, ID=9.0A VGS=0V, VDS=25V, f=1MHz
Min.
200 2.0 -
Typ.
0.14 10.5 942 227 55 15 130 135 105 22 6.6 7.2
Max.
4.0 1 100 100 0.17 1240 310 71 28 -
Unit
V V A A nA S
pF
VDD=125V, ID=18A RG=25Ω
-
③④
VDS=160V, VGS=10V ID=18A
-
ns
nC
③④
-
Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted)
Characteristic
Source current Source current(Pulsed) Forward voltage Reverse recovery time Reverse recovery charge ① ④
Symbol
IS ISM VSD trr Qrr
Test Condition
Integral reverse diode in the MOSFET VGS=0V, IS=18A Is=18A, VGS=0, diS/dt=100A/us
Min
-
Typ
208 1.63
Max
18 72 1.4 -
Unit
A V ns uC
Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=2.1mH, IAS=18A, VDD=50V, RG=27Ω ③ Pulse Test : Pulse Width 300us, Duty cycle≤ 2% ④ Essentially independent of operating temperature
KSD-T6O013-001
2
SMK1820D
Electrical Characteristic Curves
Fig. 1 ID - VDS Fig. 2 ID - VGS
:
-
Fig. 3 RDS(on) - ID
Fig. 4 IS - VSD
Fig. 5 Capacitance - VDS
Fig. 6 VGS - QG
℃
KSD-T6O013-001
3
SMK1820D
Fig. 7 VDSS - TJ Fig. 8 RDS(on) - TJ
ㅋ
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