DatasheetsPDF.com

SMK1820D Dataheets PDF



Part Number SMK1820D
Manufacturers KODENSHI KOREA
Logo KODENSHI KOREA
Description Advanced N-Ch Power MOSFET
Datasheet SMK1820D DatasheetSMK1820D Datasheet (PDF)

SMK1820D Advanced N-Ch Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features     High Voltage: BVDSS=200V(Min.) Low Crss : Crss=55pF(Typ.) Low gate charge : Qg=22nC(Typ.) Low RDS(on) :RDS(on)=0.17Ω(Max.) Type No. SMK1820D Marking SMK1820 Package Code TO-252 PIN Connection D D Ordering Information G S G TO-252 S Marking Diagram Column 1 2 : Device Code Column 3: Production Information e.g.) YWW -. Y: Year Code -. WW: Week Code Absolute maximum ratings.

  SMK1820D   SMK1820D



Document
SMK1820D Advanced N-Ch Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features     High Voltage: BVDSS=200V(Min.) Low Crss : Crss=55pF(Typ.) Low gate charge : Qg=22nC(Typ.) Low RDS(on) :RDS(on)=0.17Ω(Max.) Type No. SMK1820D Marking SMK1820 Package Code TO-252 PIN Connection D D Ordering Information G S G TO-252 S Marking Diagram Column 1 2 : Device Code Column 3: Production Information e.g.) YWW -. Y: Year Code -. WW: Week Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) * Symbol VDSS VGSS ID (TC=25℃) (TC=100℃) IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 200 30 18 11.3 72 70 18 453 18 13.9 150 -55~150 Unit V V A A A W A mJ A mJ C Drain current (Pulsed) * Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature Characteristic Thermal resistance Junction-case ** Symbol Rth(J-C) Rth(J-A) Typ. - Max 1.79 50 Unit ℃/W Junction-ambient ** When mounted on the minimum pad size recommended (PCB Mount) KSD-T6O013-001 1 SMK1820D Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ ④ Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250A, VGS=0 ID=250A, VDS= VGS VDS=200V, VGS=0V VDS=160V, VGS=0V, TC=125℃ VDS=0V, VGS=30V VGS=10V, ID=9.0A VDS=10V, ID=9.0A VGS=0V, VDS=25V, f=1MHz Min. 200 2.0 - Typ. 0.14 10.5 942 227 55 15 130 135 105 22 6.6 7.2 Max. 4.0 1 100 100 0.17 1240 310 71 28 - Unit V V A A nA  S pF VDD=125V, ID=18A RG=25Ω - ③④ VDS=160V, VGS=10V ID=18A - ns nC ③④ - Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted) Characteristic Source current Source current(Pulsed) Forward voltage Reverse recovery time Reverse recovery charge ① ④ Symbol IS ISM VSD trr Qrr Test Condition Integral reverse diode in the MOSFET VGS=0V, IS=18A Is=18A, VGS=0, diS/dt=100A/us Min - Typ 208 1.63 Max 18 72 1.4 - Unit A V ns uC Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=2.1mH, IAS=18A, VDD=50V, RG=27Ω ③ Pulse Test : Pulse Width 300us, Duty cycle≤ 2% ④ Essentially independent of operating temperature KSD-T6O013-001 2 SMK1820D Electrical Characteristic Curves Fig. 1 ID - VDS Fig. 2 ID - VGS : - Fig. 3 RDS(on) - ID Fig. 4 IS - VSD Fig. 5 Capacitance - VDS Fig. 6 VGS - QG ℃ KSD-T6O013-001 3 SMK1820D Fig. 7 VDSS - TJ Fig. 8 RDS(on) - TJ ㅋ .


SMK1625FJ SMK1820D SMK1820D2


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)