SMK830D

SMK830D Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features High Voltage : BVDSS=500V(Min.) Low Crss : Crss=33pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) : RDS(on)=1.5Ω(Max.) PIN Connection D D G Package Code TO-252 G S S TO-252 Ordering Information Type No. SMK830D Marking SMK830 Marking Diagram SMK 830 YWW Column 1,2 : Device Code Column 3 : Production Information e.g.) YWW -. YWW : Date Code (year, week) Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature ② ② ① ① * Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD IAS EAS IAR EAR TJ Tstg Rating 500 ±30 4.5 2.9 18 48 4.5 250 4.5 5.0 150 -55~150 Unit V V A A A W A mJ A mJ °C Characteristic Thermal resistance Junction-case Junction-ambient ** Symbol Rth(J-C) Rth(J-A) Typ. - Max. 2.6 50 Unit °C/W ** When mounted on the minimum pad size recommended (PCB Mount) KSD-T6O010-001 1 SMK830D Electrical Characteristics (TC=25°C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Rever...