SMK830F

SMK830F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features High Voltage : BVDSS=500V(Min.) Low Crss : Crss=33pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) : RDS(on)=1.5Ω(Max.) G Package Code TO-220F-3L GD S TO-220F-3L PIN Connection D Ordering Information Type No. SMK830F Marking SMK830 S Marking Diagram Column 1 : Manufacturer AUK AUK GYMDD YMDD Δ SMK830 SDB20D45 Column 2 : Production Information e.g.) GYMDD -. G : Factory management code -. YMDD : Date Code (year, month, date) Column 3 : Device Code Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature ② ② ① ① * Symbol VDSS VGSS ID TC=25℃ TC=100℃ IDM PD IAS EAS IAR EAR TJ Tstg Rating 500 ±30 4.5 2.8 18 30 4.5 472 4.5 5.0 150 -55~150 Unit V V A A A W A mJ A mJ °C °C Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-A) Typ. - Max. 4.16 62.5 Unit ℃/W KSD-T0O049-001 1 SMK830F Electrical Characteristics (TC=25°C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacit...