MFIRF7N60

MFIRF7N60 MCIRF7N60 POWER MOSFET ID = 7.0A VDS = 600V RDS(on)MAX = 1.2Ω Description/ Features The MCIRF7N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. The new energy efficient design also offers a drainto-source diode with a fast recovery time. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. 150℃ Tj operation ● Low Power Loss & Low cost ●Fast Switching ●RoHS Compliant ● Major Ratings and Characteristics Characteristics ID IDM VDS VGS TJ T storage Values 7.0 28.0 600 ±30 150 -55 ~150 Units A A V V ℃ ℃ Case Styles 1、 GATE 2、 DRAIN 3、 SOURCE 1、 GATE 2、 DRAIN 3、 SOURCE Ordering Information Part Number MCIRF7N60 MFIRF7N60 Package TO-220 TO-220F Packaging Tube Tube 1 of 7 MFIRF7N60 MCIRF7N60 Absolute Maximum Rating (Ta = 25℃) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Pulsed Total Dissipation Junction Temperature Storage Temperature Single Pulse Avalanche Energy Symbol VDS VGS IDM TO-220 PD TO-220F TJ Tstg. EAS 150 -55~150 TO-220 420 mj 45 ℃ ℃ Value 600 ±30 28 125 W Unit V V A TO-220F 420 Electrical Characteristics(Tamb=25℃) Characteristic Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source Leakage Current Drain-Source Diode Forward Voltage Forward Trans conductance Gate-Body Leakage Current(Vds=0V) Static Drain-Source On Resistance Thermal Resistance Junction-Case Symbol BVDSS VG...