DatasheetsPDF.com

SEMiX151GAL12E4s Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part SEMiX151GAL12E4s
Description IGBT
Feature SEMiX151GAL12E4s SEMiX® 1s Trench IGBT Modules SEMiX151GAL12E4s Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive t emperature coefficient
• High short c ircuit capability
• UL recognized, fi le no.
E63532 Typical Applications*
• AC inverter drives
• UPS
• Electro nic Welding Remarks
• Case temperatur e limited to TC=125°C max.

• Product reliability results are valid for Tj=1 50°C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 3xICnom VGES tpsc Tj VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V .
Manufacture Semikron International
Datasheet
Download SEMiX151GAL12E4s Datasheet
Part SEMiX151GAL12E4s
Description IGBT
Feature SEMiX151GAL12E4s SEMiX® 1s Trench IGBT Modules SEMiX151GAL12E4s Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive t emperature coefficient
• High short c ircuit capability
• UL recognized, fi le no.
E63532 Typical Applications*
• AC inverter drives
• UPS
• Electro nic Welding Remarks
• Case temperatur e limited to TC=125°C max.

• Product reliability results are valid for Tj=1 50°C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 3xICnom VGES tpsc Tj VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V .
Manufacture Semikron International
Datasheet
Download SEMiX151GAL12E4s Datasheet

SEMiX151GAL12E4s

SEMiX151GAL12E4s
SEMiX151GAL12E4s

SEMiX151GAL12E4s

Recommended third-party SEMiX151GAL12E4s Datasheet

 

 

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)