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PSHI06 Dataheets PDF



Part Number PSHI06
Manufacturers Powersem GmbH
Logo Powersem GmbH
Description IGBT Module H-Bridge Configuration
Datasheet PSHI06 DatasheetPSHI06 Datasheet (PDF)

ECO-PAC 2 PSHI 75D/06* H-Bridge Configuration Preliminary Data Sheet TM IGBT Module IC25 = 69 A VCES = 600 V VCE(sat)typ. = 2.3 V Short Circuit SOA Capability Square RBSOA F10 A1 H13 S18 N9 NTC P18 PSHI 75D/06* *NTC optional IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol TC = 25°C TC = 80°C VGE = ±15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions Conditions TVJ = 25.

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ECO-PAC 2 PSHI 75D/06* H-Bridge Configuration Preliminary Data Sheet TM IGBT Module IC25 = 69 A VCES = 600 V VCE(sat)typ. = 2.3 V Short Circuit SOA Capability Square RBSOA F10 A1 H13 S18 N9 NTC P18 PSHI 75D/06* *NTC optional IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol TC = 25°C TC = 80°C VGE = ±15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions Conditions TVJ = 25°C to 150°C Maximum Ratings 600 ± 20 69 48 100 VCES 10 208 V V A A A µs W Features • • • • • • • • • • • • • • • • • • • Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.3 2.8 4.5 2.8 6.5 0.8 4.4 100 50 55 300 30 1.8 1.4 2.8 1.2 V V V mA mA nA ns ns ns ns mJ mJ nF 0.6 K/W K/W NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate Isolation voltage 3000 V∼ UL registered, E 148688 Advantages space and weight savings reduced protection circuits package designed for wave soldering High power density Easy to mount with two screws VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH IC = 75 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 300 V; IC = 40 A VGE = 15/0 V; RG = 22 Ω Typical Applications motor control - DC motor armature winding - DC motor excitation winding - synchronous motor excitation winding supply of transformer primary winding - power supplies - welding - X-ray - UPS - battery charger VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT) with heatsink compound (0.42 K/m.K; 50 µm) Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions.  2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSHI 75D/06 Reverse diodes (FRED) Symbol IF25 IF80 Symbol VF IRM trr RthJC RthJH Conditions TC = 25°C TC = 80°C Conditions IF = 40 A; TVJ = 25°C TVJ = 125°C IF = 30 A; diF/dt = 500 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V with heatsink compound (0.42 K/m.K; 50 µm) Maximum Ratings 56 35 A A Package style and outline Dimensions in mm (1mm = 0.0394“) Characteristic Values min. typ. max. 2.32 1.58 15 70 2.6 2.59 V V A ns 1.3 K/W K/W Temperature Sensor NTC Symbol R25 B25/50 Conditions T = 25°C Characteristic Values min. typ. max. 455 470 3474 485 kΩ K Module Symbol TVJ Tstg VISOL Md a Symbol dS dA Weight IISOL ≤ 1 mA; 50/60 Hz Mounting torque (M4) Max. allowable acceleration Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to.


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