PSHM120

ECO-PACTM 2 Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family PSHM 120/01 L4 L6 L9 P18 R18 A1 E10 F10 K12 NTC K13 ID25 VDSS RDSon trr = 75 A = 100 V = 25 mΩ < 200 ns Preliminary Data Sheet MOSFETs Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Test Conditions Maximum Ratings 100 100 ±20 ±30 75 300 75 30 5 300 V V V V A A A mJ V/ns W Features HiPerFETTM technology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode ECO-PAC 2 package - isolated back surface - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - solderable pins for PCB mounting UL registered, E 148688 Applications Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2.0 4 ±100 250 1 25 25 30 4500 1600 800 20 60 80 60 180 36 85 0.25 30 110 110 90 260 70 160 0.5 V V nA µA mA mΩ S VDSS VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS; TJ = 25°C VGS = 0 V; TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t < 30...